CONTROL OF PARAMETERS AND MANAGEMENT OF THE SEMICONDUCTOR VAPOR DEPOSITION PROCESS FROM GAS PHASE

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Authors:  Qosimov Daler Abdukadirovich - Degree Applicant of the Department Electronics of the PEI «KSU named after academic Bobojon Gafurov»

 

JOURNAL NUMBER: 1(64). YEAR OF ISSUE2023. LANGUAGE OF THE ARTICLE: Russian

 

ANNOTATION

A brief review is given of the most common in practice method for obtaining semiconductor materials, including silicon-hydrogen reduction of halides from the gas phase. Data are given on the formation of a vapor-gas mixture under production conditions, but also in the range of variation of the initial process parameters. The value of the results obtained in the production of solar cells from secondary cast polysilicon is emphasized.

 

KEY WORDS

hydrogen reduction, gas phase, cast polysilicon layer.